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We present the growth habits of GaAs and InGaAs quantum wells grown by organometallic-molecular-beam epitaxy (OM-MBE) on (100) GaAs substrates with micron-range corrugations aligned along the [011̄] direction. The growth habits resemble those obtained by molecular-beam epitaxy, but with several obvious differences, which are discussed on the basis of their different growth mechanisms. These differences reduce the importance of the geometric factors for OM-MBE which dominate in MBE. We observe lateral compositional variations in the InGaAs quantum well. The patterned samples exhibit enhanced luminescence efficiency compared to reference flat samples.
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Tamargo et al. (1992) studied this question.
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