Additive nanolithography with electron-beam induced deposition is applied to generate a nanostructured integrated field emission electron source. The source is built into a lithographically fabricated pattern of connecting lines on a chip. Current stabilizing resistors are integrated in to the connecting lines with the deposition technique. Field emission microscope investigation of deposited supertips proves that a confined emission is delivered from conducting tips into a beam divergence angle of ±7°. The reduced brightness of the deposited supertips is evaluated. A tenfold higher reduced brightness is observed if compared to conventional Schottky field emitters.
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Schoessler et al. (1998) studied this question.
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