Thermal analysis of analog and noise parameters of dual material recessed source-drain junctionless gate all around MOSFETs

The noise characteristics have become important because of the ongoing downscaling of MOS devices. Output Impedance (Real Z0), Cross-Correlation Factor (CCF), Minimum Noise Figure (MNF), and Auto-Correlation Factor (ACF) are four metrics that may be used to assess an electrical device’s noise performance. In this study, we investigated the effect of temperature variations on noise, analog parameters performance, and Hot-Carrier Injection (HCI) degradation of devices Double Gate work function Recessed Source-drain Junctionless Gate All Around (DGWF-Re-SD-JLGAA) and Recessed Source-Drain Junctionless Gate All Around (Re-SD-JLGAA) MOSFETs. According to simulation results, it is observed that the noise parameters have been minimal in DGWF-Re-SD-JL-GAA when temperature rises. Also, observed that the IOFF current and gate leakage current are minimal in DGWF-Re-SD-JLGAA MOSFET. The DGWF-Re-SD-JLGAA MOSFET is, therefore, best suited for low-noise analog circuit applications across a wide temperature range.