Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

We demonstrate the use of low-energy cathodoluminescence spectroscopy (CLS) to study optical transitions at defect bonding arrangements at Si–SiO2 interfaces prepared by low-temperature plasma deposition. Variable-depth excitation achieved by different electron injection energies provides a clear distinction between luminescence derived from (i) the near-interface region of the oxide film, (ii) the Si–SiO2 interface, and (iii) the underlying crystalline Si substrate. Cathodoluminescence bands at ∼0.8 and 1 eV are assigned to interfacial Si atom dangling bonds with different numbers of back-bonded Si and O atoms. CLS also reveals higher photon energy features: two bands at ∼1.9 and 2.7 eV assigned to suboxide bonding defects in the as-grown oxide films, as well as a substrate-related feature at ∼3.4 eV. The effects of hydrogenation at 400 °C and rapid thermal annealing at 900 °C, and especially the combination of both process steps is shown to dramatically reduce the intensities of the CLS features assigned to interfacial and suboxide bonding defects.