Copper gate hydrogenated amorphous silicon TFT with thin buffer layers

We demonstrated a Cu gate hydrogenated amorphous silicon thin-film transistor (TFT) with buffer layers. We introduced an AlN/Cu/Al/sub 2/O/sub 3/ multilayer for a gate of an a-Si:H TFT. The Al/sub 2/O/sub 3/ improves the adhesion to glass substrate and AlN protect the Cu diffusion to the TFT and plasma damage to Cu during plasma enhanced chemical vapor deposition of silicon-nitride. An a-Si:H TFT with a Cu gate exhibited a field effect mobility of 1.18 cm/sup 2/ V/s, a gate voltage swing of 0.87 V/dec., and a threshold voltage of 3.5 V.