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Cobalt60 and 10-MeV proton irradiations have been carried out on n-buried channel frame transfer CCDs (charge coupled devices) in order to study changes in charge transfer efficiency (CTE) and dark current for room temperature, 1 mu s/pixel, readout conditions. Bias dependence and post-annealing effects were observed for ionization damage. CTE effects are explained in terms of capture and emission from deep level traps. Temporal instabilities (random telegraph signals) were observed in the proton-induced dark current.>
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G.R. Hopkinson (1992) studied this question.
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