Silicon flat profile double drift (DD) and double Read (DLHL) IMPATT diodes have been designed and fabricated, using a novel beamlead process. The goal for the design of the active layer is a maximum negative resistance of the device for a given DC power density. Experimental results are 225 mW of RF power with DD diodes and 300 mW for DLHL diodes, both in the 140 GHz range.
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Wollitzer et al. (1996) studied this question.
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