Electron beam induced chemical vapor deposition of W and Si has been studied in a transmission electron microscope. WF6 and SiH2Cl2 were used as gas sources. Si and W clusters were initially formed. The W clusters, ∼3 nm in size, were β-W crystal, while the Si clusters were amorphous. Deposition rates can be directly calculated, by using these techniques. For example, a 120-kV electron beam at 100 A/cm2 current density will deposit W at ∼5 nm/min at 5×10−7 Torr, and Si at 2 nm/min at 5×10−5 Torr. A W rod, 15 nm in diameter, has been deposited using a 3-nm-diam focused electron beam.
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Ichihashi et al. (1988) studied this question.