Saifun NROM/spl trade/ is a novel localized charge-trapping-based nonvolatile memory technology that employs inherent two-bits-per-cell operation. NROM technology is able to provide code flash, data flash, embedded flash, and true EEPROM functionality with a single fabrication process and minor architectural adjustments. Reliability topics of NROM technology are discussed, focusing on the ability to achieve 10-year data retention after 10/sup 5/ program and erase cycles. The accumulated knowledge of NROM physics allows this technology to successfully compete with the industry standard floating-gate memory technology and to gain the acceptance of the memory market.
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Shappir et al. (2004) studied this question.
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