Electrical Properties of CuInSe2 Single Crystals Implanted with Xenon

Both p‐type and n‐type CuInSe2 single crystals were implanted with 40 keV 130Xe+ ions up to doses of 5 · 1016 cm−2. Implanted layers on p‐type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implanted layers on n‐type substrates gave also an increase of the resistivity at lower doses, but at higher doses a conductivity type conversion from n‐type to p‐type took place, followed by a decrease of the resistivity. To explain the experimental results it is supposed that the increase of the resistivity is mainly due to charge carrier scattering at extended defects while the decrease of the resistivity at high doses is due to the predominant creation of intrinsic acceptor states during implantation.