Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy

The electronic structure of wurtzite InN has been investigated by electron energy loss spectroscopy (EELS). Spectra of the nitrogen K edge and the indium M4,5 edge have been measured and were compared with calculated partial, N 2p and In 5p conduction band density of states in InN. Excellent agreement on the relative positions of the characteristic peaks were obtained. From low-loss EELS the bulk plasmon energy at 15.5 eV, location of the In 4d deep valence states at about 16.3 eV below the conduction band maximum and strong interband transitions with 6.2 eV excitation energy are also found.