We have analyzed the effect of the photon energy and temperature dependence of both the gain and the total losses inside the cavity to understand the polarization behavior of vertical-cavity surface-emitting lasers. The assumption that the losses are dominated by free-carrier absorption in the p-doped mirror is made. Developing a new theoretical approach, we are able to predict different polarization switching regimes in which switching occurs from the high- to the low-frequency mode, from the low- to the high-frequency mode, or both consecutively. All these predictions have been experimentally verified by our measurements on GaAs/AlGaAs proton-implanted vertical-cavity surface-emitting lasers.
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Ryvkin et al. (1999) studied this question.
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