The feasibility of Gunn oscillations in a planar nanoscale unipolar diode or a self-switching device (SSD) is analyzed using Monte Carlo simulations. The asymmetric nanochannel that the SSD is based on is shown to induce charge domains much more receptively when compared to a reference symmetric nanochannel. The oscillation frequency reaches 130 GHz. Potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.
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Xu et al. (2008) studied this question.
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