Nanoelectronic Y-branches have been fabricated using electron beam lithography and wet etching on modulation doped GaAs/AlGaAs heterostructures. The output voltage of the devices measured at the stem shows clear rectification characteristics as the input voltage of one branch is varied. The high frequency properties of rectification are investigated at room temperature. The second harmonic of a microwave injected into the right branch is observed at the stem up to 20 GHz.
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Worschech et al. (2001) studied this question.
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