A new approach to reducing the source resistance in InP-based InAlAs/InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2 Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5 µm long gate enhancement-mode HEMT.
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Chen et al. (1995) studied this question.
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