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The frequency upshifting of 0.8 μm picosecond laser pulses was demonstrated using the temporal change of the free carrier density in a ZnSe semiconductor crystal. The crystal was ionized by transverse propagating ps pulses. Shifts of up to 1.6 nm were observed, which agree within 25% with the theory.
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Geltner et al. (2002) studied this question.
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