Complementary physicochemical analysis by ellipsometry and Auger spectroscopy of nano-sized protective coating layers

Protective SiC-rich nano layer was created by ion beam mixing of Si/C multilayers. The transformation of the Si and C layers into a homogeneous SiC layer was analyzed using complementary depth profiling by spectroscopic ellipsometry (SE) and Auger electron spectroscopy (AES). The distribution of elements and their chemical states was revealed by AES, whereas SE measured the accurate thicknesses, density, crystallinity, and the distribution of different phases. The optical properties of the created SiC layer determined by SE were almost identical to that of ion implantation-amorphized SiC. Amorphous Si and void formations were revealed by SE. The void profile determined by SE correlated well with the Xe distribution measured by AES. The complementary capabilities of SE and AES for a detailed chemical investigation were pointed out, such as the atomic (AES), structural (AES and SE) and non-destructive depth profiling (SE) features. It was shown that besides the synergism that the two methods reveal, SE is capable of a quick, sensitive and non-destructive testing of such layer structures and materials.