Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

A low interface trap density ( D it ) Al 2 O 3 /In 0.53 Ga 0.47 As/Si MOS capacitor fabricated on an In 0.53 Ga 0.47 As heterostructure layer directly grown on a 300 mm on-axis Si(100) substrate by MOCVD with a very thin buffer layer is demonstrated. Compared with the MOS capacitors fabricated on the In 0.53 Ga 0.47 As layer grown on the lattice-matched InP substrate, the Al 2 O 3 /In 0.53 Ga 0.47 As MOS capacitors fabricated on the Si substrate exhibit excellent capacitance–voltage characteristics with a small frequency dispersion of approximately 2.5%/decade and a low interface trap density D it close to 5.5 × 10 11 cm −2 eV −1 . The results indicate the potential of integrating high-mobility InGaAs-based materials on a 300 mm Si wafer for post-CMOS device application in the future.