Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al₂O₃ as Gate Dielectric

This is the authors' abstract. We don't add key points for this paper.

High-performance inversion-type enhancement-mode n-channel In0.53Ga0.47As MOSFETs with atomic-layer-deposited (ALD) Al2O3as gate dielectric are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on compound semiconductors in general. A 0.5-mum gate-length MOSFET with an Al2O3gate oxide thickness of 8 nm shows a gate leakage current less than 10-4A/cm2at 3-V gate bias, a threshold voltage of 0.25 V, a maximum drain current of 367 mA/mm, and a transconductance of 130 mS/mm at drain voltage of 2 V. The midgap interface trap density of regrown Al2O3on In0.53Ga0.47As is ~1.4 x 1012/cm2ldr eV which is determined by low-and high-frequency capacitance-voltage method. The peak effective mobility is ~1100 cm2/ V ldr s from dc measurement, ~2200 cm2/ V ldr s after interface trap correction, and with about a factor of two to three higher than Si universal mobility in the range of 0.5-1.0-MV/cm effective electric field.