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The glass‐forming region in a GeSe 2 –As 2 Se 3 –PbSe system was determined, and the dependence of properties on the composition as a formula of 20 GeSe 2 –(80− x )As 2 Se 3 − x PbSe ( x =0–30) was investigated. Measurements include density, differential scanning calorimetry, X‐ray diffraction, Vis‐NIR, and IR transmission spectra. A fairly large glass‐forming region was obtained where the higher lead content could be introduced into the system in the As 2 Se 3 ‐rich region than in the GeSe 2 ‐rich region. With the introduction of PbSe, the density of glass increased and the calculated molar volume decreased while the crystallization tendency increased, which was indicated by the decreasing Δ T ( T x − T g ). The activation energy of crystallization and the Avrami exponents were also obtained using the modified Ozawa equation. Under proper annealing conditions, suitable IR transmittance glass–ceramics were obtained.
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Yang et al. (2007) studied this question.
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