X-ray topographic observation of moving dislocations in silicon crystals

An instantaneous display of topographic images of individual dislocations was made by the combination of a high-power x-ray generator and a television unit with an x-ray sensing PbO-Vidicon camera tube. Si wafers were deformed by tension (about 300 g/mm2) at about 1000 °C in a vacuum furnace, and, simultaneously, moving dislocations were observed continuously with the television unit. The observation of dislocations moving as fast as 0.3 mm/sec may indicate the possibility that this technique can be a powerful tool in investigating the dynamic properties of dislocations.