Compounds in the Pd-Si and Pt-Si system obtained by electron bombardment and post-thermal annealing

Thin Pt, Pd, Pt2 Si, and Pd2Si films deposited on Si were reacted by using electron beam pulses of 60 nsec duration in the 0.4–2.4 J/cm2 energy density range. Irradiaton of Pd/Si structure produces at the same time PdSi, Pd2Si, Pd3Si, and Pd4Si, while PdSi is the only phase observed starting from the Pd2Si/Si structure. Post-thermal annealing of these layers up to 600 °C induces the growth of Pd2Si phase at the expense of the other phases. PdSi seems to be a metastable phase at least up to 600 °C. PtSi, Pt2Si, Pt3Si compounds are formed after irradiation of Pt/Si structure. Post-thermal annealing at 500 °C produces PtSi. A Si-enriched metastable phase Pt2Si3 is present after irradiation of Pt2Si/Si or PtSi/Si structure. Post-thermal annealing at 450 °C produces the growth of Pt2Si3. Further annealing at 500 °C induces the formation of PtSi and Si polycrystal.