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The capabililies of GaAs MESFETs and Si MOSFETs as high-frequency switches for DC-DC power converters up to 250 MHz are compared by using SPICE siniulation. The theoretical predictions are validated by comparison with experimental results obtained on a non-optimised hybrid circuit. Potential superiority of GaAs devices is clearly shown.
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Ajram et al. (1996) studied this question.
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