Metallisation of Boron‐Doped Polysilicon Layers by Screen Printed Silver Pastes

This is the authors' abstract. We don't add key points for this paper.

In this work, we report on hole selective passivating contacts, which consist of a SiOxtunnel layer and an in situ boron‐doped 300 nm thick p+polysilicon layer deposited by LPCVD. Using a SiNx:H capping layer, we show an extremely low dark saturation current densityJ0of 1 fA cm−2after contact firing. At the same time, we demonstrate that commercially available and screen‐printed fire through Ag pastes are capable of contacting the p+polysilicon layer, with minimum contact resistanceρc = 2 mΩ cm2. We do find increased interface recombination below the metal contacts of around 250 fA cm−2, which represents a considerable advance compared to conventional screen printed metallisation on diffused junctions.