The influence of both localization and internal electric field on the microscopic photoluminescence (PL) properties of AlGaN-based quantum wells (QWs) has been studied by means of scanning near-field optical microscopy (SNOM). SNOM-PL images of three QWs with different well-layer thicknesses were measured under an illumination-collection mode. A correlation was observed between the PL intensity and the PL peak wavelength: a shorter-PL wavelength indicates a stronger intensity for a wider QW. The correlation is caused by an inhomogeneous screening of the internal electric field.
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Murotani et al. (2007) studied this question.
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