Near-field scanning optical microscopy is used to image electroluminescence from three and ten quantum-well (QW) indium gallium nitride based laser diodes. Facet cross sections are imaged with a spatial resolution of <100 nm, below and above the lasing threshold. Observation of spatially resolved spectra near the active region reveals compositional fluctuations as well as absorption and reemission of the lasing mode. Single-mode emission is observed for narrow (3 and 5 μm wide) 3 QW laser bars. Near-field measurements show a relationship between modal emission, waveguide structure, and lateral device size.
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Young et al. (1999) studied this question.
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