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June 3, 1996Applied Physics Letters

Characteristics of InGaN multi-quantum-well-structure laser diodes

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Authors

Shuji NakamuraShuji NakamuraNEC (Japan)MSMasayuki SenohNichia Corporation (Japan)SNShin‐ichi NagahamaKyoto University

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Cite This Study

Nakamura et al. (1996) studied this question.

synapsesocial.com/papers/6a87f1db6304c7fd8e4de715https://doi.org/10.1063/1.116570
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