We study the lateral diffusion of photogenerated carriers within InGaN/GaN quantum wells by scanning in the focal plane of our confocal microscope. The photoluminescence (PL) images are analyzed at varying excitation densities in the temperature range between 4 K and room temperature. The results of a blue and a green emitting sample are discussed in context of reported diffusion lengths for InGaN/GaN quantum wells. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Vierheilig et al. (2007) studied this question.
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