Lateral diffusion behavior of two-dimensional carrier gas in InGaN/GaN multiple quantum wells was investigated using optical transient transmission measurements. A large ambipolar diffusion coefficient was observed, which was attributed to the enhancement by a strong piezoelectric field. This large ambipolar diffusion coefficient was found to increase with increased well width with a value on the order of 3000 cm2/s for a 62 Å well-width sample.
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Huang et al. (2001) studied this question.
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