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We have expected that (001)Rh films with a thickness of 100 nm can be grown epitaxially on (001)MgO, because the lattice mismatch between the two-dimensional superlattice cells consisting of 11×11 unit cells of (001)Rh and 10×10 unit cells of (001)MgO is small. Thus, the effects of substrate temperature (T s) on the crystal quality, surface morphology and resistivity of sputtered Rh films were studied. As a result, it is revealed that the (001)Rh films are grown epitaxially on (001)MgO at T s=500°C with the relationship of Rh(001)[110]∥MgO(001)[110]. In addition, the average surface roughness of the epitaxially grown (001)Rh films is 0.28 nm, and a minimum resistivity of 4.9 µΩ cm is obtained.
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Kato et al. (2005) studied this question.
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