Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InClx. Annealing at 330 °C induces desorption of this overlayer and reveals a clean arsenic-rich (2×4)/c(2×8) surface. The indium-rich (4×2)/c(8×2) reconstruction is obtained upon further annealing to 410 °C.