Comparing the results for nitrogen doping in hydrogenated amorphous silicon ( a-Si:H) with those for phosphorus doping, the increase in the charged-dangling-bond density estimated by equilibrium electron spin resonance (ESR) and light-induced ESR is found to have no apparent correlation with the increase in the electrical conductivity. The results for varying concentrations of nitrogen doping are also consistent with this finding. The increase of potential fluctuations due to structural disorder by nitrogen doping in an a-Si:H network appears to be the dominant origin of the increase of charged dangling bonds in the case of nitrogen doping.
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Masuda et al. (1994) studied this question.
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