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Transient photocurrent measurements on a-As2Se3 doped with Cl, Br, I, Ge, In, Tl, Na, K, Ag and Cu are reported as well as those on GeSeTe. For most samples which show no deviations from the power-law decay (t −1 + α) of the average carrier mobility, the change in mobility can be entirely accounted for by a variation of α.
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Vaninov et al. (1982) studied this question.
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