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October 14, 2014Semiconductor Science and Technology

Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

Youxi Lin Ding Wang D. Donetsky G. Kipshidze L. Shterengas L. E. Vorobjev Gregory Belenky

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Abstract

Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors, Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Vorobjev, Leonid E, Belenky, Gregory

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Lin et al. (2014) studied this question.

synapsesocial.com/papers/6aaf85ab3a7145d0a4e398c0 https://doi.org/10.1088/0268-1242/29/11/112002

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1n B n detector, an infrared detector with reduced dark current and higher operating temperatureOriginal Research · 2006 · 713 citations
2Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structuresOriginal Research · 2009 · 146 citations
3Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materialsOriginal Research · 2010 · 127 citations
4Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescenceOriginal Research · 2010 · 150 citations
5Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSbOriginal Research · 2011 · 314 citations

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