Properties of p-type Indium Antimonide: I. Electrical Properties

The dependence of electron and hole mobilities on carrier concentration has been determined for p-type indium antimonide with impurity concentrations ranging from 10 14 to 2 × 10 17 cm -3 . The method used was the analysis of the variation of Hall coefficient and resistivity with a magnetic field. Good agreement was obtained with a simple theory, which assumes that the carrier relaxation time is independent of energy. The decrease of electron mobility with acceptor concentration can be explained by assuming that in pure indium antimonide the important scattering mechanisms are polar scattering and electron-hole scattering.