We describe a processing technology for patterning InAs/AlSb heterostructures far in the submicron regime. The processing is based on a new, highly selective wet etchant for AlSb. We discuss the electrical characterization of narrow ballistic channels (down to ≈140 nm width) realized with present technology, and demonstrate that the processing preserves the high mobility of the material.
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Morpurgo et al. (1997) studied this question.
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