Focused ion beam lithography is applied for the first time to low noise HEMTs for delineating a mushroom shaped quarter micron gate. The very low noise performance obtained, which is of 0.68 and 0.83 dB minimum noise figure at 12 and 18 GHz respectively, shows that focused ion beam lithography is very promising for super low noise HEMT applications.
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Nagahama et al. (1988) studied this question.
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