Double Node Upset Tolerant RHBD15T SRAM Cell Design for Space Applications

In this paper, a new Radiation-Hardened-ByDesign (RHBD) SRAM is proposed to mitigate the Single Event Upset (SEU) and Single Event Double Node Upset (SEDU). The Monte-Carlo analysis with 5000 charge-pair samples is used to estimate the failure probability of the SRAM cells. When compared to the recently reported RHBD SRAM cells, the proposed RHBD15T SRAM achieved a zero percent failure probability for the given charge distribution. Read and write performances of the proposed SRAM cell are improved using a separate read and write circuitry at different nodes. The read delay, write delay, and power consumption are reduced by 42.3%, 5.02%, and 46.79% whereas HSNM, RSNM, and WSNM are increased by 7.18%, 78.08%, and 26.92%, respectively when compared to recently reported RSP14T SRAM cell at the cost of 2.15% increased area overhead. RHBD15T delivers 3.02× times higher SEDU critical charge when compared to recently reported RSP14T SRAM cell, which states that the RHBD15T SRAM cell is more robust in a radiative environment.