The authors show modulation of Curie temperature TC and coercivity μ0Hc by applying external electric fields E in a ferromagnetic semiconductor (Ga,Mn)As, where a field-effect transistor structure with an Al2O3 gate insulator is utilized. Application of E=+5(–5)MV∕cm decreases (increases) TC of the channel layer. μ0Hc also decreases (increases) with increasing (decreasing) E below TC. The mechanism of the modulation of μ0Hc by E is discussed.
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Chiba et al. (2006) studied this question.
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