Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs

This is the authors' abstract. We don't add key points for this paper.

Surface photovoltage spectroscopy studies on thick semi-insulating GaAs wafers are reported in the range 850–950 nm using the chopped light geometry. We observed some interesting sharp features in the sub-band-gap of SI-GaAs, which were reported recently [Appl. Phys. Lett. 79, 1715(2001); Rev. Sci. Instrum. 73, 1835 (2002)]. In this article, we present the dependence of these features on the chopping frequency and the source intensity. The intensity variation in the above-band-gap region and for the A peak (898 nm) in the sub-band-gap region could be fitted with single component while it is necessary to consider more than one component to fit the data for the Q peak (887 nm) in the sub-band-gap region. A model consistent with the observed features is also proposed.