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Radiation-induced defect annealing in He or Fe-implanted 6H-SiC by means of Fe-ion irradiation is investigated by cross-sectional transmission electron microscopy (XTEM). The lattice defects are formed by He implantation at 450°C, and amorphization is formed by Fe implantation at room temperature (RT). Postimplantation, the specimens are irradiated by 6.7-MeV/u Fe17+ ions at RT. We investigate the evolution of the lattice defects using XTEM before and after Fe17+-ion irradiation. It shows that Fe17+-ion irradiation induces the recovery of pre-exiting lattice defect and epitaxial recrystallization of the amorphous layer. The detailed reason for Fe17+-ion irradiation-induced defect annealing in SiC is discussed.
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Wang et al. (2019) studied this question.
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