Selective low temperature microcap packaging technique through flip chip and wafer level alignment

In this study, a new technique of selective microcap bonding for packaging 3-D MEMS (Micro Electro Mechanical Systems) devices is presented. Microcap bonding on a selected area of the host wafer was successfully demonstrated through flip chip and wafer level alignment. A passivation treatment was developed to separate the microcap from the carrier wafer. A thick metal nickel (Ni) microcap was fabricated by an electroplating process. Its stiffness is superior to that of thin film poly-silicon made by the surface micromachining technique. For the selective microcap packaging process, photo definable materials served as the intermediate adhesive layer between the host wafer and the metal microcap on the carrier wafer. Several types of photo definable material used as the adhesive layer were tested and characterized for bonding strength. The experimental result shows that excellent bonding strength at low bonding temperature can be achieved.