GaInAs lattice matched to InP was grown by molecular-beam epitaxy over a temperature range of 100–450 °C and characterized by x-ray diffraction, resistivity, and secondary ion mass spectroscopy. X-ray diffraction analysis indicated the incorporation of excess As for samples grown below 250 °C. As-grown GaInAs was n-type, with electrical concentration increasing with decreasing growth temperature, ranging from 5×1014 cm−3 (450 °C) to 1.8×1017 (150 °C). Secondary ion mass spectroscopy indicated that this behavior was not due to the incorporation of background n-type dopants. Be- and Si-doped GaInAs at 5×1018 cm−3 showed full electrical activation for growth temperatures down to 260 °C, with only partial activation for Si and no activation for Be for growth temperatures below 260 °C.
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Metzger et al. (1993) studied this question.