Thin, polycrystalline films of p-type Zn3P2 were grown by close-spaced vapor transport on mica substrates coated with films of Fe and Si. Schottky solar cells were prepared by sputter depositing a thin, transparent film of Mg on Zn3P2. A total area conversion efficiency of 4.3% was achieved on 1-cm2 area cell, under simulated AM1 illumination. The short-circuit current and open-circuit voltage were comparable to similar devices on single-crystal Zn3P2. The barrier height was found to be ∼1.3 eV, higher than for Mg/Zn3P2 contacts reported earlier.
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Medha Bhushan (1982) studied this question.
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