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A high‐power terahertz solid‐state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective‐ground four‐way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ∼10 mW is obtained at 305 GHz with better than 20 dB small‐signal gain.
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Yu et al. (2014) studied this question.
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