Investigation of the Impact of Angles and Rotation of Low-Energy Protons in SRAM Cells Down to 16 nm

This is the authors' abstract. We don't add key points for this paper.

This work presents the SEU responses of four SRAM devices (65nm, 40nm, 28nm and 16nm) measured at different angles of incidence and orientation of the device in respect to the low energy proton beam direction. Experimental data are discussed with the support of multi-physics and multi-scale simulations. Difference of one order of magnitude is observed for SRAMs irradiated between the different directions the beam is entering the device. The conclusions drawn from the simulation results suggesting that the difference in the SEU cross section could be attributed to the charge sharing between the N and P wells of the two inverters of the SRAM bit. The consequent feedback reduces the overall ionization effects in the SRAM cell when exposed to low energy protons.