It is proposed that measurements of the isothermal pressure dependences of emission rates and capture cross sections can provide a quantitative measure of the lattice volume relaxation accompanying carrier capture and emission processes by deep levels. The method is demonstrated for the gold acceptor and the oxygen-vacancy pair (A center) levels in silicon. The results represent what is believed to be the first quantitative determination of these relaxations for any deep levels in any semiconductor.
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Samara et al. (1986) studied this question.
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