Bsim3v3 Mosfet Model

The BSIM3v3 compact MOSFET model is reviewed. It is a physics-based model that is accurate, smooth, continuous, scalable, predictive and computationally robust over different regions of operation and a wide geometry range. BSIM3v3 considers all major physical effects in deep submicron MOSFETs, making it a good base for future sub-0.1m device models and for statistical circuit designs. A key feature of the model lies in its thorough, accurate and functional mathematical representation of MOS device physics, which has made BSIM3v3 selected by an international consortium of semiconductor companies as the first industry standard MOSFET model.