Answers are grounded in this paper and cite their sources.
Tunneling properties and their temperature variations of molecular bean epitaxy grown symmetric AlAs/GaAs/AlAs resonant tunneling diodes with thin barriers are studied theoretically and experimentally. The measured peak and valley current densities show strong dependences on temperature. A Monte Carlo simulation including impurity and optical-phonon scatterings is developed for the calculation of the current-voltage behavior of the double barrier structures. This approach reveals pronounced temperature dependent tunneling features which agree well with measured results.
No takes yet. Share an insight, caveat, or question.
Fu et al. (1993) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: