Robust Ohmic Contact in Monolayer ZrI2 Coupled with Cold Metal

This is the authors' abstract. We don't add key points for this paper.

The application of cold metals with an energy gap close to the Fermi level has shown significant promise in lowering the level of power dissipation in diodes and transistors. Here we investigate the interfacial contact properties of several cold metals with monolayer ZrI 2 using density functional calculations. We found that when ZrI 2 uses NbS 2, TaTe 2, and TaSi 2 N 4 as electrodes to construct the transistor, n-type ohmic contact is established in the vertical direction, while p-type ohmic contact is formed along the lateral direction. For ZrI 2 /Sc(OH) 2, the p-type ohmic contact can be found along the vertical direction. However, there is an n-type Schottky barrier of 0.234 eV along the lateral direction. Due to the Fermi-level pinning effect, the vertical ohmic contact is robust to the layer distance. These findings reveal the potential of these cold metals as ideal contact electrodes for ZrI 2, paving the way for the application of cold metals and ZrI 2 in high-performance devices.